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MR16R1624(8/G)EG0 MR18R1624(8/G)EG0
Change History
Version 0.1 (December 2003) - Preliminary
* First copy. * Based on the 1.0 ver. (July 2002) 256/288Mbit D-die RIMM Module Datasheet
Version 1.0 (May 2004)
* Eliminate "Preliminary"
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(16Mx16)*4(8/16)pcs RIMM Module based on 256Mb E-die, 32s banks,16K/32ms Ref, 2.5V (16Mx18)*4(8/16)pcs RIMM Module based on 288Mb E-die, 32s banks,16K/32ms Ref, 2.5V
Overview
The RIMM module is a general purpose high- performance memory module suitable for use in a broad range of applications including computer memory, personal computers, workstations and other applications where high bandwidth and low latency are required. The RIMM module consists of 256/288Mb devices. These are extremely high-speed CMOS DRAMs organized as 16M words by 16 or 18 bits. The use of Rambus Signaling Level (RSL) technology permits up to 1066 MHz transfer rates while using conventional system and board design technologies. RDRAM devices are capable of sustained data transfers at 0.94 ns per two bytes (7.5ns per 16 bytes). The RDRAM architecture enables the highest sustained bandwidth for multiple, simultaneous, randomly addressed, memory transactions. The separate control and data buses with independent row and column control yield over 95% bus efficiency. The RDRAM device's 32-bank architecture supports up to four simultaneous transactions per device. RDRAM
Key Timing Parameters/Part Numbers
The following table lists the frequency and latency bins available for RIMM modules. Table 1: Part Number by Freq. & Latency
Speed Organization Bin
tRAC I/O (Row Freq. Access (MHz) Time) ns 1066 800 800 1066 800 800 1066 800 800 32P 40 45 32P 40 45 32P 40 45
Part Number
-CT9 64M x 16/18 -CM8 -CK8 -CT9 128M x 16/18 -CM8 -CK8 -CT9 256M x 16/18 -CM8 -CK8
MR16/18R1624EG0-CT9 MR16/18R1624EG0-CM8 MR16/18R1624EG0-CK8 MR16/18R1628EG0-CT9 MR16/18R1628EG0-CM8 MR16/18R1628EG0-CK8 MR16/18R162GEG0-CT9 MR16/18R162GEG0-CM8 MR16/18R162GEG0-CK8
Features
High speed up to 1066 MHz RDRAM storage 184 edge connector pads with 1mm pad spacing Module PCB size : 133.35mm x 31.75mm x 1.27mm
Form Factor
The RIMM modules are offered in 184-pad 1mm edge connector pad pitch suitable for 184 contact RIMM connectors. Figure 1 below, shows a sixteen device RIMM module.
(5.25" x 1.25" x 0.05") - 256Mb and 288Mb base PC800 RIMM Module Module PCB size : 133.35mm x 34.93mm x 1.27mm (5.25" x 1.375" x 0.05") - 256Mb and 288Mb base PC1066 RIMM Module Each RDRAM device has 32 banks, for a total of 512, 256, 128 banks on each 512/576MB, 256/288MB, 128/144MB module respectively Gold plated edge connector pad contacts Serial Presence Detect(SPD) support Operates from a 2.5 volt supply (5%) Powerdown self refresh modes Separate Row and Column buses for higher efficiency WBGA lead free package (92/84 balls)
Note: On double sided modules, RDRAM devices are also installed on bottom side of PCB.
Figure 1: RIMM Module shown with heat spreader removed
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Table 2: Module Pad Numbers and Signal Names
Pin A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 A20 A21 A22 A23 A24 A25 A26 A27 A28 A29 A30 A31 A32 A33 A34 A35 A36 A37 A38 A39 A40 A41 A42 A43 A44 A45 A46 Pin Name Gnd LDQA8 Gnd LDQA6 Gnd LDQA4 Gnd LDQA2 Gnd LDQA0 Gnd LCTMN Gnd LCTM Gnd NC Gnd LROW1 Gnd LCOL4 Gnd LCOL2 Gnd LCOL0 Gnd LDQB1 Gnd LDQB3 Gnd LDQB5 Gnd LDQB7 Gnd LSCK Vcmos SOUT Vcmos NC Gnd NC Vdd Vdd NC NC NC NC Pin B1 B2 B3 B4 B5 B6 B7 B8 B9 B10 B11 B12 B13 B14 B15 B16 B17 B18 B19 B20 B21 B22 B23 B24 B25 B26 B27 B28 B29 B30 B31 B32 B33 B34 B35 B36 B37 B38 B39 B40 B41 B42 B43 B44 B45 B46 Pin Name Gnd LDQA7 Gnd LDQA5 Gnd LDQA3 Gnd LDQA1 Gnd LCFM Gnd LCFMN Gnd NC Gnd LROW2 Gnd LROW0 Gnd LCOL3 Gnd LCOL1 Gnd LDQB0 Gnd LDQB2 Gnd LDQB4 Gnd LDQB6 Gnd LDQB8 Gnd LCMD Vcmos SIN Vcmos NC Gnd NC Vdd Vdd NC NC NC NC Pin A47 A48 A49 A50 A51 A52 A53 A54 A55 A56 A57 A58 A59 A60 A61 A62 A63 A64 A65 A66 A67 A68 A69 A70 A71 A72 A73 A74 A75 A76 A77 A78 A79 A80 A81 A82 A83 A84 A85 A86 A87 A88 A89 A90 A91 A92 Pin Name NC NC NC NC Vref Gnd SCL Vdd SDA SVdd SWP Vdd RSCK Gnd RDQB7 Gnd RDQB5 Gnd RDQB3 Gnd RDQB1 Gnd RCOL0 Gnd RCOL2 Gnd RCOL4 Gnd RROW1 Gnd NC Gnd RCTM Gnd RCTMN Gnd RDQA0 Gnd RDQA2 Gnd RDQA4 Gnd RDQA6 Gnd RDQA8 Gnd Pin B47 B48 B49 B50 B51 B52 B53 B54 B55 B56 B57 B58 B59 B60 B61 B62 B63 B64 B65 B66 B67 B68 B69 B70 B71 B72 B73 B74 B75 B76 B77 B78 B79 B80 B81 B82 B83 B84 B85 B86 B87 B88 B89 B90 B91 B92 Pin Name NC NC NC NC Vref Gnd SA0 Vdd SA1 SVdd SA2 Vdd RCMD Gnd RDQB8 Gnd RDQB6 Gnd RDQB4 Gnd RDQB2 Gnd RDQB0 Gnd RCOL1 Gnd RCOL3 Gnd RROW0 Gnd RROW2 Gnd NC Gnd RCFMN Gnd RCFM Gnd RDQA1 Gnd RDQA3 Gnd RDQA5 Gnd RDQA7 Gnd
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Table 3: Module Connector Pad Description
Signal Pins A1, A3, A5, A7, A9, A11, A13, A15, A17, A19, A21, A23, A25, A27, A29, A31, A33, A39, A52, A60, A62, A64, A66, A68, A70, A72, A74, A76, A78, A80, A82, A84, A86, A88, A90, A92, B1, B3, B5, B7, B9, B11, B13, B15, B17, B19, B21, B23, B25, B27, B29, B31, B33, B39, B52, B60, B62, B64, B66, B68, B70, B72, B74, B76, B78, B80, B82, B84, B86, B88, B90, B92 B10 B12 B34 A20, B20, A22, B22, A24 A14 A12 I I I I I I RSL RSL VCMOS RSL RSL RSL I/O Type Description
Gnd
Ground reference for RDRAM core and interface. 72 PCB connector pads.
LCFM LCFMN LCMD LCOL4.. LCOL0 LCTM LCTMN LDQA8.. LDQA0 LDQB8.. LDQB0 LROW2.. LROW0 LSCK
Clock from master. Interface clock used for receiving RSL signals from the Channel. Positive polarity. Clock from master. Interface clock used for receiving RSL signals from the Channel. Negative polarity. Serial Command used to read from and write to the control registers. Also used for power management. Column bus. 5-bit bus containing control and address information for column accesses. Clock to master. Interface clock used for transmitting RSL signals to the Channel. Positive polarity. Clock to master. Interface clock used for transmitting RSL signals to the Channel. Negative polarity. Data bus A. A 9-bit bus carrying a byte of read or write data between the Channel and the RDRAM device. LDQA8 is non-functional on modules with x16 RDRAM devices Data bus B. A 9-bit bus carrying a byte of read or write data between the Channel and the RDRAM device. LDQB8 is nonfunctional on modules with x16 RDRAM devices. Row bus. 3-bit bus containing control and address information for row accesses. Serial Clock input. Clock source used to read from and write to the RDRAM control registers. These pads are not connected. These 24 connector pads are reserved for future use. Clock from master. Interface clock used for receiving RSL signals from the Channel. Positive polarity. Clock from master. Interface clock used for receiving RSL signals from the Channel. Negative polarity. Serial Command Input. Pin used to read from and write to the control registers. Also used for power management.
A2, B2, A4, B4, A6, B6, A8, B8, A10
I/O
RSL
B32, A32, B30, A30, B28, A28, B26, A26, B24 B16, A18, B18 A34 A16, B14, A38, B38, A40, B40, A43, B43, A44, B44, A45, B45, A46, B46, A47, B47, A48, B48, A49, B49, A50, B50, A77, B79 B83 B81 B59
I/O
RSL
I I
RSL VCMOS
NC
RCFM RCFMN RCMD
I I I
RSL RSL VCMOS
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Signal RCOL4.. RCOL0 RCTM RCTMN RDQA8.. RDQA0 RDQB8.. RDQB0 RROW2.. RROW0 RSCK SA0 SA1 SA2 SCL SDA SIN SOUT SVDD SWP VCMOS Vdd Vref
Pins A73, B73, A71, B71, A69 A79 A81 A91, B91, A89, B89, A87, B87, A85, B85, A83 B61, A61, B63, A63, B65, A65, B67, A67, B69 B77, A75, B75 A59 B53 B55 B57 A53 A55 B36 A36 A56, B56 A57 A35, B35, A37, B37 A41, A42, A54, A58, B41, B42, B54, B58 A51, B51
I/O I I I
Type RSL RSL RSL
Description Column bus. 5-bit bus containing control and address information for column accesses. Clock to master. Interface clock used for transmitting RSL signals to the Channel. Positive polarity. Clock to master. Interface clock used for transmitting RSL signals to the Channel. Negative polarity. Data bus A. A 9-bit bus carrying a byte of read or write data between the Channel and the RDRAM device. RDQA8 is non-functional on modules x16 RDRAM devices. Data bus B. A 9-bit bus carrying a byte of read or write data between the Channel and the RDRAM device. RDQB8 is non-functional on modules x16 RDRAM devices. Row bus. 3-bit bus containing control and address information for row accesses. Serial Clock input. Clock source used to read from and write to the RDRAM control registers. Serial Presence Detect Address 0. Serial Presence Detect Address 1. Serial Presence Detect Address 2. Serial Presence Detect Clock. Serial Presence Detect Data (Open Collector I/O). Serial I/O for reading from and writing to the control registers. Attaches to SIO0 of the first RDRAM device on the module. Serial I/O for reading from and writing to the control registers. Attaches to SIO1 of the last RDRAM device on the module. SPD Voltage. Used for signals SCL, SDA, SWE, SA0, SA1 and SA2.
I/O
RSL
I/O
RSL
I I I I I I I/O I/O I/O
RSL VCMOS SVDD SVDD SVDD SVDD SVDD VCMOS VCMOS
I
SVDD
Serial Presence Detect Write Protect (active high). When low, the SPD can be written as well as read. CMOS I/O Voltage. Used for signals CMD, SCK, SIN, SOUT. Supply voltage for the RDRAM core and interface logic. Logic threshold reference voltage for RSL signals.
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LDQA8 LDQA7 LDQA6 LDQA5 LDQA4 LDQA3 LDQA2 LDQA1 LDQA0 LCFM LCFMN LCTM LCTMN LROW2 LROW1 LROW0 LCOL4 LCOL3 LCOL2 LCOL1 LCOL0 LDQB0 LDQB1 LDQB2 LDQB3 LDQB4 LDQB5 LDQB6 LDQB7 LDQB8
LCMD RCMD
LSCK
Note 1. Rambus Channel signals form a loop through the RIMM module, with the exception of the SIO chain. Note 2. See Serial Presence Detection Specification for information on the SPD device and its contents.
VREF
* * *
SIN SIO0 SIO1 SCK CMD Vref SIO0 SIO1 SCK CMD Vref SIO0 SIO1 SCK CMD Vref SIO0 SIO1 SCK CMD Vref SOUT
Vdd DQA8 DQA7 DQA6 DQA5 DQA4 DQA3 DQA2 DQA1 DQA0 CFM CFMN CTM CTMN ROW2 ROW1 ROW0 COL4 COL3 COL2 COL1 COL0 DQB0 DQB1 DQB2 DQB3 DQB4 DQB5 DQB6 DQB7 DQB8
U1
RDRAM Device(256/288Mb)
DQA8 DQA7 DQA6 DQA5 DQA4 DQA3 DQA2 DQA1 DQA0 CFM CFMN CTM CTMN ROW2 ROW1 ROW0 COL4 COL3 COL2 COL1 COL0 DQB0 DQB1 DQB2 DQB3 DQB4 DQB5 DQB6 DQB7 DQB8 Gnd VREF
2 per RDRAM device 0.22/0.1Fa
U2
RDRAM Device (256/288Mb)
DQA8 DQA7 DQA6 DQA5 DQA4 DQA3 DQA2 DQA1 DQA0 CFM CFMN CTM CTMN ROW2 ROW1 ROW0 COL4 COL3 COL2 COL1 COL0 DQB0 DQB1 DQB2 DQB3 DQB4 DQB5 DQB6 DQB7 DQB8 Gnd VCMOS
1 per 2 RDRAM devices Plus one Near Connector 0.22/0.1Fa
U3
RDRAM Device (256/288Mb)
* * *
DQA8 DQA7 DQA6 DQA5 DQA4 DQA3 DQA2 DQA1 DQA0 CFM CFMN CTM CTMN ROW2 ROW1 ROW0 COL4 COL3 COL2 COL1 COL0 DQB0 DQB1 DQB2 DQB3 DQB4 DQB5 DQB6 DQB7 DQB8 Gnd
1 per 2 RDRAM devices 0.22/0.1Fa
a.
0.1 F : 800MHz products for 128/144MB and 256/288MB 0.22 F : the other products
UN
RDRAM Device (256/288Mb)
Module Capacity 512/576MB 256/288MB 128/144MB N 16 8 4
RSCK
RDQA8 RDQA7 RDQA6 RDQA5 RDQA4 RDQA3 RDQA2 RDQA1 RDQA0 RCFM RCFMN RCTM RCTMN RROW2 RROW1 RROW0 RCOL4 RCOL3 RCOL2 RCOL1 RCOL0 RDQB0 RDQB1 RDQB2 RDQB3 RDQB4 RDQB5 RDQB6 RDQB7 RDQB8 SVDD SCL SWP 47K SA0 SA1 SA2 Serial Presence Detect Vcc SCL SDA WP A0 A1 A2 SVDD SDA
U0
Gnd
0.22/0.1Fa
Figure 2: RIMM Module Functional Diagram
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Absolute Maximum Ratings
Table 4: Absolute Maximum Ratings
Symbol VI,ABS VDD,ABS TSTORE TPLATE Parameter Voltage applied to any RSL or CMOS signal pad with respect to Gnd Voltage on VDD with respect to Gnd Storage temperature Plate temperature Min - 0.3 - 0.5 - 50 Max VDD + 0.3 VDD + 1.0 100 92 Unit V V C C
DC Recommended Electrical Conditions
Table 5: DC Recommended Electrical Conditions
Symbol VDD VCMOS VREF VSPD Supply voltage CMOS I/O power supply at pad for 2.5V controllers: CMOS I/O power supply at pad for 1.8V controllers: Reference voltage Serial Presence Detector- Positive power supply Parameter and Conditions Min 2.50 - 0.13 VDD 1.8 - 0.1 1.4 - 0.2 2.2 Max 2.50 + 0.13 VDD 1.8 + 0.2 1.4 + 0.2 3.6 Unit V V V V V
Table 6: RIMM Module Capacity and Number of RDRAM device
RIMM Module Capacity: 512/576MB 256/288MB 128/144MB
Number of 256/288Mb RDRAM devices
16
8
4
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RIMM Module Current Profile
Table 7: RIMM Module Current Profile
RIMM Module Capacity IDD Number of 256/288Mb RDRAM devices RIMM Module power conditions a IDD1 One RDRAM device in Readb, balance in NAP mode One RDRAM device in Readb, balance in Standby mode One RDRAM device in Readb, balance in Active mode One RDRAM device in Write, balance in NAP mode One RDRAM device in Write, balance in Standby mode One RDRAM device in Write, balance in Active mode Freq
-1066 -800 -1066 -800 -1066 -800 -1066 -800 -1066 -800 -1066 -800
512/576MB 16 Max 760/810c 620/660 2275/2325 1985/2025 3100/3150 2585/2625 750/800 605/640 2265/2315 1970/2005 3090/3140 2570/2605
256/288MB 8 Max 728/778 588/628 1435/1485 1225/1265 1820/1870 1505/1545 718/768 573/608 1425/1475 1210/1245 1810/1860 1490/1525
128/144MB 4 Max 712/762 mA 572/612 1015/1065 mA 845/885 1180/1230 mA 965/1005 702/752 mA 557/592 1005/1055 mA 830/865 1170/1220 mA 950/985 Unit
IDD2
IDD3
IDD4
IDD5
IDD6
a. Actual power will depend on memory controller and usage patterns. Power does not include Refresh Current. b. I/O current is a function of the % of 1's, to add I/O power for 50% 1's for a X16 need to add 257mA or 290mA for X18 ECC module for the following: VDD = 2.5V, VTERM = 1.8V, VREF = 1.4V and VDIL = VREF - 0.5V. c. Current values represent X16(Non-Ecc) / X18(Ecc)
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AC Electrical Specifications
Table 8: AC Electrical Specifications
Symbol ZL ZUL-CMOS TPD Parameter and Conditions Module Impedance of RSL Signals Module Impedance of SCK and CMOS signals Propagation Delay variation of RSL signals. Average clock delay from finger to finger of all RSL clock nets (CTM, CTMN, CFM, and CFMN) Propagation delay variation of RSL signals with respect to TPD b,c for 4 and 8 device modules Propagation delay variation of RSL signals with respect to TPD b,c for 16 device modules Propagation delay variation of SCK signals with respect to an average clock delay Propagation delay variation of CMD signals with respect to SCK signal Attenuation Limit Forward crosstalk coefficient (300ps input rise time @ 20%-80%) Backward crosstalk coefficient (300ps input rise time @ 20%80%) Min 25.2 23.8 Typ 28 28 Max 30.8 32.2 See Table10a,b 21 24 250 200 See Table10a See Table10a See Table10a Unit
-
ns
-21 -24 -250 -200
ps ps ps ps % % %
TPD
TPD-CMOS TPD-SCK,CMD V/VIN VXF/VIN VXB/VIN
a. Table 10 lists parameters and specifications for different storage capacity RIMM Modules that use 256Mb or 288Mb RDRAM devices. b. TPD or Average clock delay is defined as the delay from finger to finger of RSL signal. c. If the RIMM module meets the following specification, then it is compliant to the specification. If the RIMM module does not meet these specifica tions, then the specification can be adjusted by the "Adjusted TPD Specification" table 9 below.
Adjusted TPD Specification
Table 9: Adjusted TPD Specification
Symbol Parameter and Conditions Propagation delay variation of RSL signals with respect to TPD for 4 and 8 device modules Propagation delay variation of RSL signals with respect to TPD for 16 device modules Adjusted Min/Max +/-[20+(18*N*Z0)]a +/-[24+(18*N*Z0)]a Absolute Min / Max -30 -50 30 50 Unit
ps ps
TPD
a. Where:
N = Number of RDRAM devices installed on the RIMM module Z0 = delta Z0% = (max Z0 - min Z0)/(min Z0) (max Z0 and min Z0 are obtained from the loaded (high impedance) impedance coupons of all RSL layers on the modules)
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AC Electrical Specifications for RIMM Modules
Table 10: AC Electrical Specifications for RIMM Modules
RIMM Module Capacity Symbol Number of 256/288Mb RDRAM devices
Parameter and Condition for RIMM Modules
512/576MB 16 Max 2.11 2.11 27.0 25.0 8.0 8.0 2.5 2.5 1.2 1.2
256/288MB 8 Max 1.56 1.56 17.0 16.0 4.0 4.0 2.0 2.0 0.8 0.8
128/144MB 4 Max 1.56 ns 1.56 17.0 % 16.0 4.0 % 4.0 2.0 % 2.0 0.6 0.6 Unit
Freq. -1066
TPD
Propagation Delay, all RSL signals -800 -1066 Attenuation Limit -800 Forward crosstalk coefficient (300ps input rise time @ 20%-80%) Backward crosstalk coefficient (300ps input rise time @ 20%-80%) -1066 -800 -1066 -800 -1066
V/VIN
VXF/VIN
VXB/VIN
RDC
DC Resistance Limit -800
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Physical Dimensions -1 ( For PCB )
The following defines the RIMM module dimensions. All units are in millimeters with inches in brackets[ ], where appropriate. The dimensions without tolerance specification use the default tolerance of 0.127[0.005].
133.350.127[5.2500.005] 6.35[0.25] 3.00[0.118]
120.65[4.75] DIA 2.44 R 2.00
+
17.78[0.700]
COMPONENT AREA (A SIDE)
4.000.15 [0.1570.006]
31.75[1.25]
+
7.468[0.294]
5.68[0.2236]
Min.6.35[0.25]
29.21[1.15]
A-1
DETAIL A
1.00[0.039]
DETAIL B 11.50[0.453]
A-92 45.00[1.772] R 1.00 78.175[3.078]
45.00[1.772] 4.50[0.177] 55.1750.08[2.1720.003]
B-1
B-92
8.60[0.339]
COMPONENT AREA (B SIDE)
Note : The gray area above represents the contact surface of the heat spreader.
0.800.10 [0.0310.004]
Heat spreader
1.00[0.039] Min.4.88 [0.192] 0.150.10 [0.0060.004] 3.000.10 [0.120.004]
2.990.05 [0.120.002]
2.000.10 [0.0790.004]
DETAIL A
DETAIL B
Figure 3: 256Mb/288Mb base RIMM Module PCB Physical Dimensions
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Physical Dimensions -2 ( For PCB )
The following defines the RIMM module dimensions. All units are in millimeters with inches in brackets[ ], where appropriate. The dimensions without tolerance specification use the default tolerance of 0.127[0.005].
133.350.127[5.2500.005] 6.35[0.25] 3.00[0.118]
120.65[4.75] DIA 2.44 R 2.00
+
17.78[0.700]
COMPONENT AREA (A SIDE)
4.000.15 [0.1570.006]
34.93[1.375]
+
7.468[0.294]
5.68[0.2236]
Min.6.35[0.25]
29.21[1.15]
A-1
DETAIL A
1.00[0.039]
DETAIL B 11.50[0.453]
A-92 45.00[1.772] R 1.00 78.175[3.078]
45.00[1.772] 4.50[0.177] 55.1750.08[2.1720.003]
B-1
B-92
8.60[0.339]
COMPONENT AREA (B SIDE)
Note : The gray area above represents the contact surface of the heat spreader.
0.800.10 [0.0310.004]
Heat spreader
1.00[0.039] Min.4.88 [0.192] 0.150.10 [0.0060.004] 3.000.10 [0.120.004]
2.990.05 [0.120.002]
2.000.10 [0.0790.004]
DETAIL A
DETAIL B
Figure 4: 256Mb/288Mb base RIMM Module PCB Physical Dimensions
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Physical Dimensions -3 ( For Heat Spreader )
The following defines the RIMM module dimensions. All units are in millimeters with inches in brackets[ ], where appropriate. The dimensions without tolerance specification use the default tolerance of 0.127[0.005].
1270.25[5.00.009] 120.660.12[4.7480.005] 108.810.12[4.2830.005] 2.9 [0.114]
13.7[0.539]
26.54[1.045]
DIA 2.360.05[0.090.001] Center-Point
WARNING ! HOT SURFACE
http://www.samsungsemi.com
12.70.07[0.50.002] 12.70.07[0.50.002]
1.000.07 [0.040.002]
133.350.127[5.2500.005] 1270.25[5.00.009]
A
26.54[1.045]
31.75[1.25]
WARNING ! HOT SURFACE
http://www.samsungsemi.com
A SECTION A-A
Max 4.70 [0.185] Heat Spreader CSP Thermal Conductive Gap Filling Material PCB 1.270.10 [0.0500.004]
SECTION A-A
Max 7.80 [0.307] Heat Spreader CSP Thermal Conductive Gap Filling Material PCB 1.270.10 [0.0500.004]
[ Single side module ]
[ Double side module ]
Figure 5: Heat Spreader Physical Dimensions
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Physical Dimensions -4 ( For Heat Spreader )
The following defines the RIMM module dimensions. All units are in millimeters with inches in brackets[ ], where appropriate. The dimensions without tolerance specification use the default tolerance of 0.127[0.005].
1270.25[5.00.009] 120.660.12[4.7480.005] 108.810.12[4.2830.005] 2.9 [0.114]
16.5[0.649]
29.42[1.158]
DIA 2.360.05[0.090.001] Center-Point
WARNING ! HOT SURFACE
http://www.samsungsemi.com
12.70.07[0.50.002] 12.70.07[0.50.002]
1.000.07 [0.040.002]
133.350.127[5.2500.005] 1270.25[5.00.009]
A
29.42[1.158]
34.93[1.375]
WARNING ! HOT SURFACE
http://www.samsungsemi.com
A SECTION A-A
Max 4.70 [0.185] Heat Spreader CSP Thermal Conductive Gap Filling Material PCB 1.270.10 [0.0500.004]
SECTION A-A
Max 7.80 [0.307] Heat Spreader CSP Thermal Conductive Gap Filling Material PCB 1.270.10 [0.0500.004]
[ Single side module ]
[ Double side module ]
Figure 6: Heat Spreader Physical Dimensions
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MR16R1624(8/G)EG0 MR18R1624(8/G)EG0
Standard RIMM Module Marking
The RIMM modules available from Samsung are marked like Figure 7 below. This marking also assists users to specify and verify if the correct RIMM modules are installed in their systems. In the diagram, a label is shown attached to A B C D E F G the RIMM module's heat spreader. Information contained on the label is specific to the RIMM module and provides RDRAM device information without requiring removal of the RIMM module's heat spreader.
KOREA 0420 512MB /16 ECC MR18R162GEG0-CT9 1066-32P 102
L
Label Field A B C D E F G H Vendor Logo Country Year & Week code Module Memory Capacity Number of RDRAM devices ECC Support Notice! Caution Logo Gerber & SPD Version tRAC Memory Speed Part No.
K
J
I
H
Marked Text SAMSUNG KOREA yyww 128MB, 256MB, 512MB 4/8/16 blank = 8 bit Bytes ECC = 9 bit Bytes Gerber : 10 = 1.0 ver. Unit RDRAM devices -
Description RIMM Module Vendor SAMSUNG Logo Area Country of origin Manufactured Year & Week code Number of 8-bit or 9-bit MBytes of RDRAM storage in RIMM module Number of RDRAM devices contained in the RIMM module Indicates whether the RIMM module supports 8 (non ECC) or 9 (ECC) bit Bytes Hot surface caution notice. ISO Standard PCB Gerber file & SPD code version used on RIMM Module SPD : Row Access Time Data transfer speed for RDRAM devices SAMSUNG RIMM Module part No.
I
01 = 0.1 ver. 2 = 1.3 ver.
-
J K L
-32P, -40, -45 1066, 800 See Table 1
ns MHz -
Figure 7: RIMM Module Marking Example
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Version 1.0 May 2004
MR16R1624(8/G)EG0 MR18R1624(8/G)EG0
Table Of Contents
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Key Timing Parameters/Part Numbers . . . . . . . . . . . . . . . . 1 Module Pad Numbers and Signal Names . . . . . . . . . . . . . . 2 Module Connector Pad Description . . . . . . . . . . . . . . . 3 - 4 RIMM Module Functional Diagram . . . . . . . . . . . . . . . . . . 5 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . 6 DC Recommended Electrical Conditions . . . . . . . . . . . . . . 6 RIMM Module Supply Current Profile . . . . . . . . . . . . . . . . 7 AC Electrical Specifications . . . . . . . . . . . . . . . . . . . . . 8 - 9 Physical Dimensions -1, -2 ( For PCB ) . . . . . . . . . . 10 - 11 Physical Dimensions -3, -4 ( For Heat Spreader) . . . 12 - 13 Standard RIMM Module Marking. . . . . . . . . . . . . . . . . . . 14
Copyright (c) May 2004, Samsung Electronics. All rights reserved. Direct Rambus, Direct RDRAM and SO-RIMM are trademarks of Rambus Inc. Rambus, RDRAM, RIMM and the Rambus Logo are registered trademarks of Rambus Inc. This document contains advanced information that is subject to change by Samsung Electronics without notice Document Version 1.0 Samsung Electronics Co. Ltd. San #16 Banwol-ri, Taean-Eup Hwasung-City, Gyeonggi-Do, KOREA Telephone: 82-31-208-6369 Fax: 82-31-208-6799 http://www.intl.samsungsemi.com
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Version 1.0 May 2004

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